Samsung 990 EVO Plus 4TB capacity-focused SSD
The Samsung 990 EVO Plus 4TB is the largest capacity in the EVO Plus lineup, offering 7,200 MB/s sequential reads with 2,400 TBW endurance for users who need bulk NVMe storage at mid-range pricing.
The 4 TB model is the flagship capacity of the 990 EVO Plus family and one of the few 4 TB consumer NVMe drives available from a major brand. It uses Samsung's Piccolo 8-channel DRAM-less controller with eighth-generation 236-layer V8 TLC NAND, the same platform as the 1 TB and 2 TB models. The hybrid interface supports PCIe 5.0 x2 and PCIe 4.0 x4, both delivering the rated 7,200 MB/s sequential reads.
The 4 TB model stands out for its endurance: 2,400 TBW is double the 2 TB model and quadruple the 1 TB, giving professional users confidence for sustained write workloads. This capacity also means the drive has more NAND die for interleaving, which helps sustained write speeds after the TurboWrite SLC cache saturates.
Samsung launched the 4 TB model alongside the smaller capacities, making the 990 EVO Plus one of the first DRAM-less consumer SSDs to reach 4 TB. It competes with QLC-based 4 TB drives like the Samsung 870 QVO (SATA) and the Crucial P3 Plus 4TB (PCIe 4.0 QLC), but the TLC NAND and higher endurance of the 990 EVO Plus give it a clear advantage for write-heavy use cases. The Samsung 990 Pro 4TB is the alternative with a DRAM cache if sustained performance is the priority. The drive ships in the standard M.2 2280 form factor and is single-sided, ensuring broad compatibility.
✅ Storage Comparisons:
🚀 Performance and benchmarks
Samsung rates the 990 EVO Plus 4TB at 7,200 MB/s sequential read and 6,300 MB/s sequential write, identical to the 1 TB and 2 TB models across the lineup. Random performance reaches 1,000,000 read IOPS and 1,400,000 write IOPS, also matching the smaller capacities.
Samsung 990 EVO Plus 4 TB vs M.2 5.0 x 2 / 4.0 x 4 peers
Switch between sequential throughput and random IOPS to see how this drive stacks up against other M.2 5.0 x 2 / 4.0 x 4 SSDs in our database. The highlighted bar is the drive on this page — click any other bar to open that drive.
- Samsung 990 EVO Plus 4 TB (this drive): 7,200 MB/s read, 6,300 MB/s write
- Samsung 990 EVO Plus 1 TB: 7,200 MB/s read, 6,300 MB/s write
- Samsung 990 EVO Plus 2 TB: 7,200 MB/s read, 6,300 MB/s write
The 4 TB model's performance advantage emerges in sustained write scenarios. With more NAND die to distribute writes across, native TLC write speeds are higher than the 1 TB model once the TurboWrite SLC cache fills. The larger SLC cache allocation on the 4 TB also means longer burst write windows before throttling occurs, which benefits users moving large files or working with video content.
The DRAM-less HMB design keeps power consumption around 5.5 W, impressively low for a 4 TB drive. The drive is single-sided, fitting standard M.2 2280 slots without clearance issues. In PCIe 4.0 x4 mode the drive delivers its full rated speed, so users without PCIe 5.0 motherboards can still get maximum performance without compromise.
🖥️ Endurance and warranty
Samsung covers the 990 EVO Plus 4TB with a five-year limited warranty and a 2,400 TBW endurance rating. At 2,400 terabytes written, the drive can handle approximately 1.3 TB of daily writes over the five-year warranty period. Writing 100 GB per day would consume only about eight percent of the endurance over five years, giving the drive a very long service life for most workloads. Samsung Magician software provides real-time TBW monitoring and health status, giving professional users the data they need to plan drive replacement cycles. This endurance rating is generous for a mid-range drive and reflects the durability advantages of TLC NAND over QLC alternatives.
📊 Specs
| Category | Value |
|---|---|
| Capacity [?] | 4 TB |
| Interface [?] | M.2 5.0 x 2 / 4.0 x 4 |
| Controller [?] | Samsung Piccolo 8 Channel |
| Memory type [?] | Samsung 236-L V8 TLC |
| DRAM [?] | HMB |
| Read speed (MB/s) [?] | 7200 |
| Write speed (MB/s) [?] | 6300 |
| Read IOPS [?] | 1000000 |
| Write IOPS [?] | 1400000 |
| Endurance (TBW) [?] | 2400 |
| MTBF (million hours) [?] | 1500000 |
| Warranty (years) [?] | 5 |
Conclusion
The Samsung 990 EVO Plus 4TB is a strong option for users who need a large, fast NVMe drive without paying the premium for a DRAM-equipped flagship. Its 7,200 MB/s reads, 2,400 TBW endurance, and TLC NAND give it an edge over QLC-based 4 TB alternatives from other brands. The main limitation is the DRAM-less design, which means sustained random writes trail drives like the Samsung 990 Pro 4TB with dedicated DRAM. For gaming, media storage, and general productivity at 4 TB, the EVO Plus delivers reliable performance at a competitive price point. Samsung's five-year warranty and Magician software support provide additional peace of mind for long-term storage investments.
+ Pros
- 7,200 MB/s sequential read speed
- 4TB capacity with TLC NAND
- 2,400 TBW endurance with five-year warranty
- Low 5.5W active power consumption
- Hybrid PCIe 5.0 x2 / PCIe 4.0 x4 interface
- Single-sided M.2 2280 design
- Samsung Magician software support
- Cons
- DRAM-less, uses HMB from system RAM
- Write speed trails DRAM-equipped drives
- Only x2 lanes on PCIe 5.0
- Higher cost than QLC-based 4TB alternatives
- Not ideal for heavy random write workloads
🛒 Buy this or similar SSD Storage:
✨ Video Review
Samsung 990 EVO PLUS SSD Review - A Gen 4.5 SSD?
